发明名称 High Yield Complementary Metal-Oxide Semiconductor X-ray Detector
摘要 A digital X-ray detector includes a scintillator that is configured to absorb radiation emitted from an X-ray radiation source and to emit light photons in response to the absorbed radiation. The detector also includes a complementary metal-oxide-semiconductor (CMOS) light imager that is configured to absorb the light photons emitted by the scintillator. The CMOS light imager includes a first surface and a second surface. The first surface is disposed opposite the second surface. The scintillator contacts the first surface of the CMOS light imager. The CMOS light imager further includes a CMOS pixel array with an array of CMOS pixels. Each individual CMOS pixel includes at least two row select transistors.
申请公布号 US2014183676(A1) 申请公布日期 2014.07.03
申请号 US201213728299 申请日期 2012.12.27
申请人 GENERAL ELECTRIC COMPANY 发明人 Liu James
分类号 H01L31/08;H01L31/18 主分类号 H01L31/08
代理机构 代理人
主权项 1. A digital X-ray detector comprising: a scintillator configured to absorb radiation emitted from an X-ray radiation source and to emit light photons in response to the absorbed radiation; and a complementary metal-oxide-semiconductor (CMOS) light imager configured to absorb the light photons emitted by the scintillator, wherein the CMOS light imager comprises a first surface and a second surface, wherein the first surface is disposed opposite the second surface, and the scintillator contacts the first surface of the CMOS light imager; wherein the CMOS light imager comprises a CMOS pixel array with an array of CMOS pixels, wherein each individual CMOS pixel comprises at least two row select transistors.
地址 Schenectady NY US