POLY RESISTOR FOR METAL GATE INTEGRATED CIRCUITS

摘要

An integrated circuit containing a metal gate transistor and a thin polysilicon resistor may be formed by forming a first layer of polysilicon and removed it in an area for the thin polysilicon resistor. A second layer of polysilicon is formed over the first layer of polysilicon and in the area for the thin polysilicon resistor. The thin polysilicon resistor is formed in the second layer of polysilicon and the sacrificial gate is formed in the first layer of polysilicon and the second layer of polysilicon. A PMD layer is formed over the second layer of polysilicon and a top portion of the PMD layer is removed so as to expose the sacrificial gate but not expose the second layer of polysilicon in the thin polysilicon resistor. The sacrificial gate is removed and a metal replacement gate is formed.

主权项

1. An integrated circuit, comprising:
a metal gate transistor having a metal gate; a pre-metal dielectric (PMD) layer over a substrate of said integrated circuit, such that said PMD layer does not extend over said metal gate; and a thin polysilicon resistor disposed above said substrate, said thin polysilicon resistor being thinner said metal gate, such that said PMD layer extends over said thin polysilicon resistor.