发明名称 LIGHT EMITTING ELEMENT
摘要 A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer, a first reflecting layer located on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, and a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.
申请公布号 US2014183586(A1) 申请公布日期 2014.07.03
申请号 US201414198158 申请日期 2014.03.05
申请人 Toyoda Gosei Co., Ltd. 发明人 Kamiya Masao;Deguchi Masashi
分类号 H01L33/42;H01L33/60 主分类号 H01L33/42
代理机构 代理人
主权项 1. A light emitting element, comprising: a semiconductor laminate structure comprising a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer; a first reflecting layer located on the semiconductor laminate structure and comprising an opening, the opening being formed in the exposed part of the first semiconductor layer; a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening; and a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer, wherein the first reflecting layer comprises a contact electrode of the second semiconductor layer.
地址 Kiyosu-shi JP
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