| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce defects of a semiconductor device, such as defects in shape and characteristic due to external stress and electrostatic discharge, to thereby provide a highly reliable semiconductor device, and to increase manufacturing yield of a semiconductor device by reducing the above defects in the manufacturing process.SOLUTION: The semiconductor device includes a semiconductor integrated circuit sandwiched by impact resistance layers against external stress or impact diffusion layers diffusing the impact, and a conductive layer covering the semiconductor integrated circuit. With the use of the conductive layer covering the semiconductor integrated circuit, electrostatic breakdown (malfunctions of the circuit or damage to a semiconductor element) due to electrostatic discharge (ESD) of the semiconductor integrated circuit can be prevented.</p> |
