发明名称 MATERIAL FOR VAPOR DEPOSITION, GAS BARRIER VAPOR DEPOSITION FILM, AND PRODUCTION METHOD OF GAS BARRIER VAPOR DEPOSITION FILM
摘要 PROBLEM TO BE SOLVED: To provide a vapor deposition material capable of suppressing occurrence of a splash phenomenon, and imparting high gas barrier, and to provide a gas barrier vapor deposition film produced by using the vapor deposition material.SOLUTION: A vapor deposition material used for producing a gas barrier vapor deposition film 10 comprises metallic silicon, silicon dioxide, metallic iron, an alloy containing iron or iron oxide. Further, the ratio of the number of total atoms of silicon and iron in an inorganic oxide film 2 constituting the gas barrier vapor deposition film 10 to the number of atoms of oxygen (O/(Si+Fe)) is 1.2 or more and 2.0 or less, and the ratio of the number of atoms of silicon in the inorganic oxide film 2 to the number of atoms of iron (Fe/Si) is 0.05 or more and 1.00 or less.
申请公布号 JP2014122412(A) 申请公布日期 2014.07.03
申请号 JP20130053315 申请日期 2013.03.15
申请人 TOPPAN PRINTING CO LTD 发明人 OSAWA KENTA;KUWAGATA YUSUKE
分类号 C23C14/24;B32B27/00;C23C14/08 主分类号 C23C14/24
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