| 摘要 |
PROBLEM TO BE SOLVED: To improve property of a semiconductor device.SOLUTION: A semiconductor device includes: a laminated insulation films which is formed above inductors Ia and which includes a polyimide film PI1 and a polyimide film PI2 which is formed on the polyimide film PI1 and has a step St2 with the polyimide film PI1; and inductors Ib formed on the laminated insulation films. Employing such a lamination structure of the polyimide films PI1 and PI2 can increase a film thickness of the insulation films between the inductors Ia, Ib thereby to improve a dielectric strength voltage. In addition, the occurrence of a depression and peeling which are caused by poor exposure can be reduced. Further, disconnection of a Cu seed layer SE and poor plating caused by the disconnection can be reduced. |
