| 发明名称 |
SEMICONDUCTOR DEVICE WITH DUAL WORK FUNCTION GATE STACKS AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A method for fabricating a semiconductor device includes forming a gate dielectric layer over a substrate; forming a metal containing layer, containing an effective work function adjust species, over the gate dielectric layer; forming an anti-reaction layer over the metal containing layer; increasing an amount of the effective work function adjust species contained in the metal containing layer; and forming, on the substrate, a gate stack by etching the anti-reaction layer, the metal containing layer, and the gate dielectric layer. |
| 申请公布号 |
US2014187030(A1) |
申请公布日期 |
2014.07.03 |
| 申请号 |
US201313845174 |
申请日期 |
2013.03.18 |
| 申请人 |
SK HYNIX INC. |
发明人 |
JI Yun-Hyuck;JANG Se-Aug;LEE Seung-Mi;KIM Hyung-Chul |
| 分类号 |
H01L29/40 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, the method comprising:
forming a gate dielectric layer over a substrate; forming a metal containing layer, containing an effective work function adjust species, over the gate dielectric layer; forming an anti-reaction layer over the metal containing layer; increasing an amount of the effective work function adjust species contained in the metal containing layer; and forming, on the substrate, a gate stack by etching the anti-reaction layer, the metal containing layer, and the gate dielectric layer. |
| 地址 |
Gyeonggi-do KR |
