| 发明名称 |
Methods for Forming FinFETs with Self-Aligned Source/Drain |
| 摘要 |
A method includes forming a gate stack to cover a middle portion of a semiconductor fin, and doping an exposed portion of the semiconductor fin with an n-type impurity to form an n-type doped region. At least a portion of the middle portion is protected by the gate stack from receiving the n-type impurity. The method further includes etching the n-type doped region using chlorine radicals to form a recess, and performing an epitaxy to re-grow a semiconductor region in the recess. |
| 申请公布号 |
US2014187011(A1) |
申请公布日期 |
2014.07.03 |
| 申请号 |
US201213728837 |
申请日期 |
2012.12.27 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Xu Jeffrey Junhao;Fang Ziwei;Zhang Ying |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a gate stack to cover a middle portion of a semiconductor fin; doping an exposed portion of the semiconductor fin with an n-type impurity to form an n-type doped region, wherein a portion of the middle portion is protected by the gate stack from receiving the n-type impurity; etching the n-type doped region using chlorine radicals to form a recess; and performing an epitaxy to re-grow a semiconductor region in the recess. |
| 地址 |
Hsin-Chu TW |
