METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

Disclosed is a method for fabricating a semiconductor device including: sequentially forming a first insulating film and a first barrier layer on a first surface of a substrate; etching the first barrier layer to form a first barrier layer pattern; etching the first insulating film to form a first insulating film pattern; removing the first barrier layer pattern and forming a first type epitaxial layer on an exposed first portion of the substrate; forming a second insulating film and a second barrier layer on the first type epitaxial layer and the first insulating film pattern; etching the second barrier layer to form a second barrier layer pattern; etching the second insulating film to form a second insulating film pattern, and etching the first insulating film pattern; and forming a second type epitaxial layer on an exposed second portion of the first surface of the n substrate.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
sequentially forming a first insulating film and a first barrier layer on a first surface of an n+ type substrate; etching the first barrier layer to form a first barrier layer pattern; etching the first insulating film by using the first barrier layer pattern as a mask to form a first insulating film pattern to thereby expose a first portion of a first surface of the n+ type silicon carbide substrate; removing the first barrier layer pattern and then forming a first type of epitaxial layer by a first epitaxial growth on the exposed first portion of the first surface of the n+ type silicon carbide substrate; sequentially forming a second insulating film and a second barrier layer on the first type of epitaxial layer and the first insulating film pattern; etching the second barrier layer to form a second barrier layer pattern; etching the second insulating film by using the second barrier layer pattern as a mask to form a second insulating film pattern, and etching the first insulating film pattern by using the second barrier layer pattern as a mask to expose a second portion of the first surface of the n+ type silicon carbide substrate; and forming a second type of epitaxial layer by a second epitaxial growth on the exposed second portion of the first surface of the n+ type silicon carbide substrate, wherein the first portion of the first surface of the n+ type silicon carbide substrate and the second portion of the first surface of the n+ type silicon carbide substrate are adjacent to each other.