NON-VOLATILE MEMORY DEVICES INCLUDING BLOCKING INSULATION PATTERNS WITH SUB-LAYERS HAVING DIFFERENT ENERGY BAND GAPS

摘要

A non-volatile memory device may include a semiconductor substrate and an isolation layer on the semiconductor substrate wherein the isolation layer defines an active region of the semiconductor substrate. A tunnel insulation layer may be provided on the active region of the semiconductor substrate, and a charge storage pattern may be provided on the tunnel insulation layer. An interface layer pattern may be provided on the charge storage pattern, and a blocking insulation pattern may be provided on the interface layer pattern. Moreover, the block insulation pattern may include a high-k dielectric material, and the interface layer pattern and the blocking insulation pattern may include different materials. A control gate electrode may be provided on the blocking insulating layer so that the blocking insulation pattern is between the interface layer pattern and the control gate electrode. Related methods are also discussed.

主权项

1. A non-volatile memory device comprising:
a semiconductor substrate; a tunnel insulation layer on the semiconductor substrate; a charge storage pattern on the tunnel insulation layer so that the tunnel insulation layer is between the charge storage pattern and the semiconductor substrate; and a blocking insulation pattern on the charge storage pattern so that the charge storage pattern is between the tunnel insulation layer and the blocking insulation pattern, wherein the blocking insulation pattern comprises a first blocking insulation sub-layer, a second blocking insulation sub-layer, and a third blocking insulation sub-layer, wherein the second blocking insulation sub-layer is between the first and third blocking insulation sub-layers, and wherein an energy band gap of the second blocking insulation sub-layer is greater than energy band gaps of the first and third blocking insulation sub-layers.