HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME

摘要

A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A dielectric passivation layer is disposed on the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer, and extend through the dielectric passivation layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. The gate electrode has an exterior surface. An oxygen containing region is embedded at least in the second III-V compound layer under the gate electrode. A gate dielectric layer has a first portion and a second portion. The first portion is under the gate electrode and on the oxygen containing region. The second portion is on a portion of the exterior surface of the gate electrode.

主权项

1. A high electron mobility transistor (HEMT) comprising:
a first III-V compound layer; a second III-V compound layer disposed on the first III-V compound layer and different from the first III-V compound layer in composition; a dielectric passivation layer disposed on the second III-V compound layer; a source feature and a drain feature disposed on the second III-V compound layer, and extending through the dielectric passivation layer; a gate electrode disposed over the second III-V compound layer between the source feature and the drain feature, the gate electrode having an exterior surface; an oxygen containing region embedded at least in the second III-V compound layer under the gate electrode; and a gate dielectric layer comprising a first portion and a second portion, wherein the first portion is under the gate electrode and on the oxygen containing region, and the second portion is on a portion of the exterior surface of the gate electrode.