SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor layer 102 having a drift region 132, a body region 103, and a source region 104 provided at a position next to the body region 103; an epitaxial layer 106 in contact with the body region; and a gate insulating film 107 provided on the epitaxial layer are formed on a principal surface of a semiconductor substrate 101. The epitaxial layer includes an interface epitaxial layer 106i in contact with the body region, a first epitaxial layer 106a on the interface epitaxial layer 106i, and a second epitaxial layer 106b on the first epitaxial layer 106a. An impurity concentration of the interface epitaxial layer is higher than an impurity concentration of the first epitaxial layer, and lower than an impurity concentration of the second epitaxial layer.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a semiconductor layer provided on a principal surface of the semiconductor substrate and including a drift region of a first conductivity type, a body region of a second conductivity type provided at a position next to the drift region, and an impurity region of a first conductivity type provided at a position next to the body region; an epitaxial layer in contact with the body region; a gate insulating film provided at a position facing the body region with the epitaxial layer interposed therebetween; and a gate electrode provided at a position facing the epitaxial layer with the gate insulating film interposed therebetween, wherein the epitaxial layer includes
an interface epitaxial layer in contact with the body region,a first epitaxial layer in contact with the interface epitaxial layer, anda second epitaxial layer in contact with the first epitaxial layer, and a first conductivity type impurity concentration of the interface epitaxial layer is higher than a first conductivity type impurity concentration of the first epitaxial layer, and lower than a first conductivity type impurity concentration of the second epitaxial layer.