ADDITION OF CARBOXYL GROUPS PLASMA DURING ETCHING FOR INTERCONNECT RELIABILITY ENHANCEMENT

摘要

The present disclosure is directed to a method of manufacturing a semiconductor structure in which a low-k dielectric layer is formed over a semiconductor substrate. Features can be formed proximate to the low-k dielectric layer by plasma etching with a plasma formed of a mixture of a CO2, CO, or carboxyl-containing source gas and a fluorine-containing source gas. The method allows for formation of damascene structures without encountering the problems associated with damage to a low-K dielectric layer.

主权项

1. A method of plasma etching a semiconductor feature, comprising:
providing a semiconductor wafer having a low-k dielectric thereon; plasma etching feature openings proximate to the low-k dielectric, the plasma containing a mixture of CxFy and a CO2, CO or carboxyl-containing source etching gas.