METHOD OF HEALING DEFECT AT JUNCTION OF SEMICONDUCTOR DEVICE USING GERMANIUM

摘要

This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600˜700° C. for 1˜3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.

主权项

1. A method of healing a defect at a junction of a semiconductor device using germanium (Ge), comprising:
1) growing a p-Ge layer on a substrate; 2) depositing an oxide film on the p-Ge layer, and patterning the oxide film, thus forming a pattern for an n+ Ge region; 3) subjecting the pattern for an n+ Ge region to ion implantation using a n-type dopant, thus forming an n+ Ge region; 4) forming a capping oxide film on the p-Ge layer; 5) performing annealing at 600˜700° C. for 1˜3 hr; and 6) subjecting the capping oxide film to patterning for forming an electrode, depositing the electrode, and performing annealing.