Method of fabricating cigs solar cells with high band gap by sequential processing

摘要

A method for forming TFPV absorber layer. A first layer including In is formed on a substrate. The first layer is partially or fully selenized to form a layer that includes InxSey. A second layer is formed on the partially or fully selenized first layer. The second layer may include multiple layers of Cu and Cu—Ga or may be a single layer of Cu—Ga. The Cu—Ga layers can be deposited from sputtering targets wherein the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. The first and second layers are then fully selenized to form a CIGS layer.

主权项

1. A method for forming a semiconductor material on a substrate comprising:
forming a first layer on the substrate, wherein the first layer comprises In and Cu; after forming the first layer, converting at least a portion of the first layer to an In-chalcogen material by heating the first layer in a first heating step in the presence of a chalcogen; forming a second layer above the first layer after the first heating step; and converting the first layer and the second layer into a chalcogenide material by heating the first layer and the second layer in a second heating step in the presence of a chalcogen.