发明名称 Systems and Devices Including Multi-Transistor Cells and Methods of Using, Making, and Operating the Same
摘要 A device may include a first transistor, a second transistor, and a data element. The first transistor may have a column gate and a channel, and the second transistor may include a row gate that crosses over the column gate, under the column gate, or both. The second transistor may also include another channel, a source disposed near a distal end of a first leg, and a drain disposed near a distal end of a second leg. The column gate may extend between the first leg and the second leg. The channel of the second transistor may be connected to the channel of the first transistor, and the data element may be connected to the source or the drain. Methods, systems, and other devices are contemplated.
申请公布号 US2014185355(A1) 申请公布日期 2014.07.03
申请号 US201314010089 申请日期 2013.08.26
申请人 Micron Technology, Inc. 发明人 Juengling Werner
分类号 G11C5/06;H01L21/28;G11C7/00 主分类号 G11C5/06
代理机构 代理人
主权项 1. A device, comprising: a plurality of data cells, wherein each data cell comprises: a first transistor comprising: a column gate; anda first channel;a second transistor comprising: a row gate, wherein the row gate crosses over the column gate, under the column gate, or both;a source disposed near a distal end of a first leg;a drain disposed near a distal end of a second leg, wherein the column gate extends between the first leg and the second leg;a second channel, wherein the second channel of the second transistor is connected to the first channel of the first transistor; anda data element connected to the source or the drain.
地址 Boise ID US