| 摘要 |
Optical absorbers, solar cells comprising the optical absorbers, and methods for making the absorbers are disclosed. The optical absorber comprises a layer comprising a semiconductor having a bandgap of between about 1.0 eV and about 1.6 eV on a substrate. The thickness of the layer is from about 1 to about 10 microns. The semiconductor comprises Fe, at least one Group IVA element, and at least one Group VIA element. The Group VIA element can be S, Se or Te. The Group IVA element can be Si or Ge. Typical compositions are Fe2(Si,Ge)(S,Se)4. The bandgap can be graded through the thickness of the absorber. High Productivity Combinatorial methods can be used to optimize the composition and grading. |
| 主权项 |
1. A method of forming an optical absorber, the method comprising:
forming a first layer on a substrate, wherein the first layer comprises Fe and at least one Group IVA element, wherein the first layer contains substantially no O; and providing a gas to the first layer, wherein the gas comprises at least one Group VIA element, wherein the optical absorber has a bandgap between 1.0 eV and 1.6 eV. |
