HIGH DOSE IMPLANTATION STRIP (HDIS) IN H2 BASE CHEMISTRY

摘要

Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.

主权项

1. A method of removing material from a work piece surface in a reaction chamber, the method comprising:
introducing a gas comprising hydrogen (H2), a weak oxidizing agent, and a fluorine-containing gas into a plasma source; generating a plasma from the gas introduced into the plasma source; and exposing the material to the plasma to remove the material from the work piece.