| 摘要 |
[Problem] To construct element isolation regions (20) by using an insulating film while forming word lines (WL) and the element isolation regions (20) by means of mutual self-alignment in an X-direction. [Solution] A semiconductor device manufacturing method has: a step of forming, on a principal surface of a semiconductor substrate (2), multiple active regions which extend in an X-direction within the principal surface and are repeatedly arranged in a Y-direction; a step of forming multiple trenches (T1) which extend in the Y-direction and define multiple active regions (silicon pillars (4a)) by respectively dividing the multiple active regions in the X-direction; a step of forming element isolation regions (20) by embedding an insulating film in the multiple trenches (T1); a step of forming trenches (T2) which extend in the Y-direction after the element isolation regions (20) are formed; and a step of forming word lines (WL) by forming a gate insulating film (27), which covers the inner surfaces of the trenches (T2), and further embedding a conductive film in the trenches (T2). The trenches (T1, T2) are formed by means of mutual self-alignment in the X-direction. |
