SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

Provided is a silicon-carbide semiconductor device whereby the impact that the off-angle of a silicon-carbide substrate has on the characteristics of the semiconductor device is reduced, allowing improved behavioral stability and reduced resistance. In this trench-gate silicon-carbide MOSFET semiconductor device, a high-concentration well region is formed inside a well region and the distance from a first side wall of the trench in said silicon-carbide semiconductor device to the high-concentration well region is made larger than the distance from a second side wall of the trench, said second side wall being opposite the first side wall with a gate electrode interposed therebetween, to the high-concentration well region.