发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
摘要 Disclosed is a thin-film transistor array substrate including a Gate driver In Panel (GIP). The GIP includes a first wiring on a substrate, a first insulating film covering the first wiring, a second wiring on the first insulating film, a second insulating film covering the second wiring, a third insulating film over the second insulating film, first and second contact holes to expose the first and second wirings, and a third wiring on the third insulating film for connection of the first and second wirings. The third insulating film includes a first area corresponding to the first and second contact holes, a second area corresponding to a region between the first and second contact holes within a first thickness range, and a remaining third area within a second thickness range, the minimum value of the first thickness range being greater than the maximum value of the second thickness range.
申请公布号 US2014183537(A1) 申请公布日期 2014.07.03
申请号 US201314102726 申请日期 2013.12.11
申请人 LG Display Co., Ltd. 发明人 Jang Jin-Hee
分类号 H01L27/12 主分类号 H01L27/12
代理机构 代理人
主权项 1. A thin film transistor array substrate comprising a cell array corresponding to a display area, and a Gate driver In Panel (GIP) corresponding to a partial area of a non-display area around the display area, wherein the GIP includes: a first wiring formed on a substrate; a first insulating film formed over the substrate to cover the first wiring; a second wiring formed on the first insulating film; a second insulating film formed over the first insulating film to cover the second wiring; a third insulating film formed over the second insulating film; a first contact hole perforated through the first, second, and third insulating films to expose a part of the first wiring; a second contact hole perforated through the second and third insulating films to expose a part of the second wiring; and a third wiring formed on the third insulating film to connect the first and second wirings to each other through the first and second contact holes, wherein, in the partial area of the non-display area, the third insulating film includes a first area, a second area and a third area, the first area where the third insulating film is removed to correspond to the first and second contact holes, the second area corresponding to a gap region between the first and second contact holes, the second area being within a first thickness range, and the third area as a remaining area except for the first and second areas, the third area being within a second thickness range different from the first thickness range, and wherein the minimum value of the first thickness range is greater than the maximum value of the second thickness range.
地址 Seoul KR