发明名称 PROCESSES FOR MULTI-LAYER DEVICES UTILIZING LAYER TRANSFER
摘要 A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.
申请公布号 WO2014105233(A2) 申请公布日期 2014.07.03
申请号 WO2013US61641 申请日期 2013.09.25
申请人 SANDIA CORPORATION 发明人 NIELSON, GREGORY, N.;KIM, BONGSANG;CRUZ-CAMPA, JOSE, LUIS;TAUKE-PEDRETTI, ANNA;CEDERBERG, JEFFREY;RESNICK, PAUL, J.;SANCHEZ, CARLOS, ANTHONY;OKANDAN, MURAT
分类号 H01L23/48;H01L21/50 主分类号 H01L23/48
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