| 摘要 |
A semiconductor device according to the present invention is provided with: a semiconductor layer; a trench that is selectively formed on an upper-surface part of the semiconductor layer and partitions off, on the upper-surface part, unit cells of a prescribed shape; a second conductive type layer that is formed so as to follow part or the entirety of the inner surface of the trench; first conductive type upper-surface layers that are formed in the unit cells so as to be exposed from the semiconductor-layer upper surface; a first conductive type lower-surface layer that is formed so as to be exposed from a semiconductor-layer lower surface; a first conductive type drift layer that is formed between the upper surface layer and the lower surface layer of the semiconductor layer, and has a lower concentration than the upper surface layer and the lower surface layer; a first electrode that is contacted with the upper surface layer and forms an ohmic junction with the upper surface layer; and a second electrode that is contacted with the lower surface layer layer and forms an ohmic junction with the lower surface layer. |
