| 摘要 |
The present invention is a method for etching a multilayer laminated film containing at least one silicon oxide film layer and at least one silicon nitride film layer with use of an etching gas so that the layers are etched at the same time, said etching method being characterized in that the etching gas contains a chain saturated fluorinated hydrocarbon compound represented by the following formula (1): CxHyFz (wherein x is 4, y is an integer of 4 or more, z is a positive integer, and y + z is 10). According to the present invention, high selectivity with respect to a mask and a good pattern shape can be achieved without obstructing a hole with a deposited film even in etching of a multilayer laminated film. |
