发明名称 SLURRY COMPOSITION AND SUBSTRATE OR WAFER POLISHING METHOD USING THE SAME
摘要 The present invention relates to a slurry composition and a method for polishing a substrate or a wafer using the same. The slurry composition of the present invention can realize high selection ratio of polishing a poly film in comparison to an oxide film, not allow flocculation of polishing particles by maintaining high dispersing stability, reduce micro-scratch generation using a slurry composition containing polishing particles prepared by a liquid method, increase the speed of polishing an oxide film, and have the high selection ratio of a poly film. The slurry composition of the present invention can also maintain dispersing stability for mixing with a polishing addictive in a neutral range of pH. Thus, the slurry composition of the present invention can be used in a polishing process that is suitable for a process for preparing semiconductors.
申请公布号 KR101406758(B1) 申请公布日期 2014.07.03
申请号 KR20120143179 申请日期 2012.12.11
申请人 K.C.TECH CO., LTD.;IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 PAIK, UN GYU;SEO, JI HOON;HAN, MOUNG HUN;CHOI, NAK HYOUN;JUNG, KI HWA;GWON, CHANG GIL;LEE, JAE WOO
分类号 C09K3/14;H01L21/304 主分类号 C09K3/14
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