发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To improve accuracy of light detection in a photo-sensor, and to increase light-receiving area of the photo-sensor.SOLUTION: A photo-sensor comprises: a light-receiving element for converting light into an electric signal; a first transistor for transferring the electric signal; and a second transistor for amplifying the electric signal. The light-receiving element is formed by using a silicon semiconductor, and the first transistor is formed by using an oxide semiconductor. The light-receiving element is a lateral junction type photodiode, and an n-layer or a p-layer included in the light-receiving element is formed while overlapping with the first transistor.</p>
申请公布号 JP2014123774(A) 申请公布日期 2014.07.03
申请号 JP20140055818 申请日期 2014.03.19
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KOZUMA MUNEHIRO;KUROKAWA YOSHIMOTO
分类号 H01L27/146;H04N5/369;H04N5/374 主分类号 H01L27/146
代理机构 代理人
主权项
地址