GROUP III-V SUBSTRATE MATERIAL WITH THIN BUFFER LAYER AND METHODS OF MAKING

摘要

A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm2 at a wavelength within a range of between about 400 nm to about 550 nm.

主权项

1. A substrate comprising:
a body comprising a Group III-V material and having an upper surface; and a buffer layer comprising a Group III-V material adjacent the upper surface of the body,
wherein the buffer layer has an average thickness within a range of between at least about 0.01 μm to not greater than about 1.3 μm.