发明名称 MEMORY
摘要 A memory in accordance with an embodiment of the present invention may include a first page buffer, a second page buffer arranged adjacent to the first page buffer in a first direction, a global pad arranged between the first page buffer and the second page buffer, and a first bit line selection unit arranged adjacent to the first page buffer and the second page buffer in a second direction substantially perpendicular to the first direction, wherein a first bit line pad is formed at a center of the a first bit line selection unit.
申请公布号 US2014185353(A1) 申请公布日期 2014.07.03
申请号 US201313830472 申请日期 2013.03.14
申请人 SK HYNIX INC. 发明人 OH Sung-Lae;LEE Go-Hyun;SON Chang-Man
分类号 G11C5/06 主分类号 G11C5/06
代理机构 代理人
主权项 1. A memory comprising: a first page buffer; a second page buffer arranged adjacent to the first page buffer in a first direction; a global pad arranged between the first page buffer and the second page buffer; and a first bit line selection unit arranged adjacent to the first page buffer and the second page buffer in a second direction substantially perpendicular to the first direction, wherein a first bit line pad is formed near a center of the a first bit line selection unit.
地址 Gyeonggi-do KR