| 摘要 |
The invention relates to a method for the production of a multistable flexible element (5), consisting in: etching a silicon component (S) in which a beam (P) connects two ends (E1; E2) of a rigid mass (MU) having a cross-section more than ten times greater than that of the beam (P); growing SiO2, at 1100°C, for a period adjusted to obtain: at the beam (P), a first ratio (RA) greater than 1 between the cross-section of a first peripheral layer (CP1) of SiO2 and that of a first silicon core (A1); and, at the mass (MU), a second ratio (RB) between the cross-section of a second peripheral layer (CP2) of SiO2 and that of a second silicon core (A2), which is less than one hundredth of the first ratio (RA); cooling to ambient temperature in order to buckle the beam (P) during the cooling of the mass (MU), said mass contracting more than the beam (P). |
