发明名称 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To suppress a crosstalk phenomenon from occurring in a light-emitting device with a single element.SOLUTION: A light-emitting device comprises: a first lower electrode 102a; a second lower electrode 102b; a partition 103; a highly-conductive layer 104; a light-emitting layers 106 and 106b, and an upper electrode 110. The highly-conductive layer 104 has higher conductivity than the light-emitting layers 106a and 106b and lower conductivity than the lower electrodes and the upper electrode. The partition 103 includes a first slope 104a located on the first lower electrode 102a side and a second slope 104b located on the second lower electrode 102b side. Thickness in a direction perpendicular to the first slope 104 of the highly-conductive layer 104 located on the first slope differs from thickness in a direction perpendicular to the second slope 104b of the highly-conductive layer 104 located on the second slope.
申请公布号 JP2014123528(A) 申请公布日期 2014.07.03
申请号 JP20120280107 申请日期 2012.12.21
申请人 SEMICONDUCTOR ENERGY LAB CO LTD;SHARP CORP 发明人 YOKOYAMA KOHEI;KOSAKA TOMOHIRO;SHIMOSHIKIRYO BUNICHI;KAWATO SHINICHI;KIKUCHI KATSUHIRO;FUTABOSHI MANABU;OCHI TAKASHI;TSUKAMOTO MASAHITO;OSAKI TOMOFUMI
分类号 H05B33/12;H01L51/50;H05B33/10;H05B33/22;H05B33/28 主分类号 H05B33/12
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