发明名称 POWER MODULE FOR AUTOMOBILE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device requiring high heat resistance, in particular, to provide the semiconductor device used for an on-vehicle AC generator, and for connecting a connection member for the semiconductor device by using Pb-free solder for reduction in an environmental load of the connection member for the semiconductor device where occurrence of voids through interfacial reactions and a problem of connection defect can be avoided even when used at high temperature.SOLUTION: A semiconductor device having heat resistance of 200°C or more is realized by suppressing interfacial reactions by combining Ni-based plating 11 with Sn-based solder 17 containing a Cu6Sn5 phase at room temperature to 200°C as a connection method with the heat resistance of 200°C.</p>
申请公布号 JP2014123745(A) 申请公布日期 2014.07.03
申请号 JP20140000048 申请日期 2014.01.06
申请人 HITACHI POWER SEMICONDUCTOR DEVICE LTD 发明人 IKEDA YASUSHI ; NAKAMURA MASATO ; MATSUYOSHI SATOSHI ; SASAKI KOJI ; HIRAMITSU SHINJI
分类号 H01L21/52;B23K35/26;C22C13/00;H01L21/60 主分类号 H01L21/52
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