发明名称 |
POWER MODULE FOR AUTOMOBILE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device requiring high heat resistance, in particular, to provide the semiconductor device used for an on-vehicle AC generator, and for connecting a connection member for the semiconductor device by using Pb-free solder for reduction in an environmental load of the connection member for the semiconductor device where occurrence of voids through interfacial reactions and a problem of connection defect can be avoided even when used at high temperature.SOLUTION: A semiconductor device having heat resistance of 200°C or more is realized by suppressing interfacial reactions by combining Ni-based plating 11 with Sn-based solder 17 containing a Cu6Sn5 phase at room temperature to 200°C as a connection method with the heat resistance of 200°C.</p> |
申请公布号 |
JP2014123745(A) |
申请公布日期 |
2014.07.03 |
申请号 |
JP20140000048 |
申请日期 |
2014.01.06 |
申请人 |
HITACHI POWER SEMICONDUCTOR DEVICE LTD |
发明人 |
IKEDA YASUSHI ; NAKAMURA MASATO ; MATSUYOSHI SATOSHI ; SASAKI KOJI ; HIRAMITSU SHINJI |
分类号 |
H01L21/52;B23K35/26;C22C13/00;H01L21/60 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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