SEMICONDUCTOR DEVICE WITH RUTILE TITANIUM OXIDE DIELECTRIC FILM

摘要

A capacitor structure includes a first electrode on a substrate; a TiO2 dielectric layer directly on the first electrode, wherein the TiO2 dielectric layer has substantially only rutile phase; and a second electrode on the TiO2 dielectric layer. Template layer, seed layer or pretreated layer is not required between the first electrode and the TiO2 dielectric layer. Besides, impurity doping is not required for the TiO2 dielectric layer.

主权项

1. A capacitor structure comprising:
a first electrode on a substrate; a titanium oxide (TiO2) dielectric layer directly on the first electrode, wherein the TiO2 dielectric layer has substantially only rutile phase; and a second electrode on the TiO2 dielectric layer.