ENGINEERED SUBSTRATES HAVING EPITAXIAL FORMATION STRUCTURES WITH ENHANCED SHEAR STRENGTH AND ASSOCIATED SYSTEMS AND METHODS

摘要

Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a shear strength enhancement material at a front surface of a donor substrate and implanting ions a depth into the donor substrate through the shear strength enhancement material. The ion implantation can form a doped portion in the donor substrate that defines an epitaxial formation structure. The method can further include transferring the epitaxial formation structure from the donor substrate to a front surface of a handle substrate. The shear strength enhancement material can be positioned between the epitaxial formation structure and the front surface of the handle substrate and bridge defects in the front surface of the handle substrate.

主权项

1. A method of forming an engineered substrate assembly, comprising:
forming a shear strength enhancement material at a front surface of a donor substrate; implanting ions a depth into the donor substrate through the shear strength enhancement material, wherein ion implantation forms a doped portion that defines an epitaxial formation structure; and transferring the epitaxial formation structure from the donor substrate to a front surface of a handle substrate, wherein the shear strength enhancement material is between the epitaxial formation structure and the front surface of the handle substrate, and wherein the shear strength enhancement material is configured to bridge defects in the front surface of the handle substrate.