Methods for Reproducible Flash Layer Deposition

摘要

A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer. The flash layer and the capping layer can be formed using an atomic layer deposition (ALD) technique. The precursor materials used for forming the flash layer and the capping layer are selected such they include at least one metal-oxygen bond. Additionally, the precursor materials are selected to also include “bulky” ligands.

主权项

1. A semiconductor layer stack comprising:
a first electrode layer formed above a substrate; a dielectric layer formed above the first electrode layer; a second electrode layer formed above the dielectric layer; at least one of a flash layer between the first electrode layer and the dielectric layer, or a capping layer between the dielectric layer and the second electrode layer; wherein the at least one of the flash layer or the capping layer is formed by an ALD technique using a metal precursor that includes a metal-oxygen bond and a metal-bulky ligand bond.