CMOS CIRCUIT AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a gate insulation layer formed over the semiconductor substrate; a gate electrode formed over the gate insulation layer, the gate electrode including a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.