| 摘要 |
An adaptive charge balanced MOSFET device includes a field plate stacks, a gate structure, a source region, a drift region and a body region. The gate structure includes a gate region surrounded by a gate insulator region. The field plate stack includes a plurality of field plate insulator regions, a plurality of field plate regions, and a field ring region. The plurality of field plates are separated from each other by respective field plate insulators. The body region is disposed between the gate structure, the source region, the drift region and the field ring region. Each of two or more field plates are coupled to the field ring. |
