SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

Provided is a silicon-carbide semiconductor device whereby the impact that the off-angle of a silicon-carbide substrate has on the characteristics of the semiconductor device is reduced, allowing improved behavioral stability and reduced resistance. In this trench-gate silicon-carbide MOSFET semiconductor device, formed on a silicon-carbide semiconductor substrate that has an off-angle, a low-channel-doping region is provided on a first-side-wall side of a trench inside a well region and a high-channel-doping region that has a lower effective acceptor concentration than the low-channel-doping region is provided on a second-side-wall side of the trench inside the well region.