| 摘要 |
PROBLEM TO BE SOLVED: To provide a triac which can be driven at a low current while maintaining high withstanding voltage characteristics and high commutation characteristics.SOLUTION: A semiconductor device comprises: a thyristor TY1 which is formed by p-type semiconductor regions P5, P3, an n-type substrate region N1, p-type semiconductor regions P2, P4 and an n-type semiconductor region N2 and between a back electrode BE and an electrode E1; and a thyristor TY2 which is formed by the p-type semiconductor regions P4, P2, the n-type substrate region N1, the p-type semiconductor regions P3, P5 and an n-type semiconductor region N4 and between the back electrode BE and the electrode E1. A depth from a surface of a semiconductor substrate to a bottom of each of the n-type semiconductor regions N2, N3 is 20 μm and over. The p-type semiconductor region P4 of a high impurity concentration is formed so as to be wrapped by the p-type semiconductor region P2 of a low impurity concentration. A difference between a depth from the surface of the semiconductor substrate to a bottom of the p-type semiconductor region P4 and a depth from the surface of the semiconductor substrate to a bottom of the p-type semiconductor region P2 is less than 10 μm. |
