MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SILICON CARBIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing apparatus of a silicon carbide substrate which can efficiently manufacture a silicon carbide substrate excellent in uniformity of an impurity concentration and excellent in crystallinity.SOLUTION: A silicon carbide substrate manufacturing method comprises: a process of preparing a base substrate 10 composed of a silicon carbide; and a process of forming an epitaxially grown film on the base substrate 10. In the process of forming the epitaxially grown film, the base substrate 10 is heated in a state where a reaction gas G3 obtained by mixture of a first gas G1 containing NHand a second gas G2 containing HCl and without containing NHis supplied toward the base substrate 10. The first gas G1 is mixed with the second gas G2 after being heated to a decomposition temperature of NH.