| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can stably perform film formation for a long period of time and can also effectively utilize raw material gas in a case where a large film deposition roll is used to realize a high film deposition rate.SOLUTION: A plasma CVD apparatus C1 includes film deposition rolls 1 and 2 in a vacuum chamber 4, and forms coating on a surface of a film W wound around the film deposition rolls 1 and 2. A first and a second rectification parts 11 and 12 are disposed at positions to face the deposition rolls 1 and 2 and away from the film deposition rolls 1 and 2 by a predetermined distance and forms a first and a second film deposition zones 13 and 14 between the first and second rectification parts 11 and 12 and the film deposition rolls 1 and 2, and rectifies the raw material gas flow so as to flow along the surface of the film W wound on the film deposition rolls 1 and 2 in the first and second film deposition zones 13 and 14. A linking part links the plasmas formed in the first and second film deposition zones 13 and 14 by linking the first and second film deposition zones 13 and 14.</p> |
