POLISHING AGENT AND POLISHING METHOD

摘要

A non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate is polished at a high polishing rate, whereby a smooth surface is obtained. There is provided a polishing agent containing: an oxidant that contains a transition metal and has a redox potential of 0.5 V or more; silica particles that have an average secondary particle size of 0.2 μm or less; and a dispersion medium, wherein a content ratio of the oxidant is not less than 0.25 mass % nor more than 5 mass %, and a content ratio of the silica particles is not less than 0.01 mass % and less than 20 mass %.

主权项

1. A polishing agent for chemical mechanical polishing a non-oxide single-crystal substrate comprising:
an oxidant containing a transition metal and having a redox potential of 0.5 V or more; silica particles having an average secondary particle size of 0.2 μm or less; and a dispersion medium,
wherein a content ratio of the oxidant is not less than 0.25 mass % nor more than 5 mass %, and a content ratio of the silica particles is not less than 0.01 mass % and less than 20 mass %.