Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Distension

摘要

Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure.

主权项

1. A process for relaxing the strain in a heterostructure comprising a substrate, a surface layer disposed on the substrate and an interface between the substrate and the surface layer, the substrate comprising a central axis, a back surface which is generally perpendicular to the central axis, and a diameter extending across the substrate through the central axis, the process comprising:
forming a dislocation source layer in the substrate; and radially distending the substrate to generate dislocations and glide the dislocations from the dislocation source layer toward the surface layer.