发明名称 |
MICROELECTRONIC METHOD FOR ETCHING A LAYER |
摘要 |
The invention relates to a microelectronic method for etching a layer to be etched, comprising the following steps: - modifying the layer to be etched from the surface of the layer to be etched and over a depth corresponding to at least a portion of the thickness of the layer to be etched so as to form a film, the modification comprising implanting light ions in the layer to be etched; - removing the film comprising a selective etching of the film relative to at least one layer underlying the film. |
申请公布号 |
WO2014102222(A1) |
申请公布日期 |
2014.07.03 |
申请号 |
WO2013EP77853 |
申请日期 |
2013.12.20 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;UNIVERSITE JOSEPH FOURIER |
发明人 |
POSSEME, NICOLAS;JOUBERT, OLIVIER;VALLIER, LAURENT |
分类号 |
H01L21/306;H01L21/311;H01L21/3213 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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