| 摘要 |
Provided is a nitride light emitting diode having a local doped p-type limit structure, comprising a n-type layer (102), an active layer (103), and p-type layer (105) formed of a nitride semiconductor, a p-type limit structure (104) being further provided between the p-type layer and the active layer, where the p-type limit structure is a multi-layer structure, whose end portion in contact with the active layer is an aluminum indium gallium nitride material layer (104a), the aluminum indium gallium nitride material layer being locally doped, and whose surface in contact with the active layer is not doped. Therefore, light emitting efficiency is improved, and low voltage and desirable aging characteristic are provided. |
