| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novolak type phenolic resin which can produce a photoresist having high heat resistance, high sensitivity, a high residual film rate and high resolution as a photoresist used for lithography on the production of semiconductors or LCD. <P>SOLUTION: The novolak type phenolic resin, obtained by the reaction of a monohydric phenol component (a) containing m-cresol and/or p-cresol, a polyhydric phenol component (b) containing a dihydric phenol compound and/or a trihydric phenol and an aldehyde component (c), is characterized in that the mass ratio (a)/(b) of the monohydric phenol component (a) to the polyhydric phenol component (b) is 99/1 to 50/50; the aldehyde component (c) contains polyaldehyde (c1) and formaldehyde (c2); and the molar ratio (c1)/(c2) of the polyaldehyde (c1) to formaldehyde (c2) in the aldehyde component (c) is 5/95 to 95/5. <P>COPYRIGHT: (C)2012,JPO&INPIT |
