<p>A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.</p>
