| 摘要 |
<p>The challenge of the present invention is to suppress the electric potential degradation of a gate of a pull-up transistor. For a first transistor of a drive circuit, a first terminal is electrically connected to a second wiring, a second terminal is electrically connected to a first wiring, and a gate is electrically connected to the first terminal of a third transistor and a second circuit. In a second transistor, the first terminal is electrically connected to the first wiring, the second terminal is electrically connected to a sixth wiring, and a gate is electrically connected to the gate of the third transistor and the first circuit. In the third transistor, the second terminal is electrically connected to the sixth wiring. The first circuit is electrically connected to a third wiring, a fourth wiring, a fifth wiring, and the sixth wiring. The second circuit is electrically connected to the first wiring, the second wiring, and the sixth wiring.</p> |
