Semiconductor package with integrated electromagnetic shielding

摘要

There are disclosed herein various implementations of a shield interposer situated between a top active die and a bottom active die for shielding the active dies from electromagnetic noise. One implementation includes an interposer dielectric layer, a through-silicon via (TSV) within the interposer dielectric layer, and an electromagnetic shield. The TSV connects the electromagnetic shield to a first fixed potential. The electromagnetic shield may include a grid of conductive layers laterally extending across the shield interposer. The shield interposer may also include another electromagnetic shield connected to another fixed potential.