| 发明名称 |
DEPOSIT REMOVAL METHOD |
| 摘要 |
<p>One embodiment of the deposit removal method includes: preparing a substrate having a pattern on which a deposit is deposited, the pattern being formed by etching; exposing the substrate to a first atmosphere containing hydrogen fluoride gas; exposing the substrate to oxygen plasma while heating after the step of exposing the substrate to the first atmosphere; and exposing the substrate to a second atmosphere containing hydrogen fluoride gas to remove the deposit on the substrate after the step of exposing the substrate to the oxygen plasma.</p> |
| 申请公布号 |
KR20140082758(A) |
申请公布日期 |
2014.07.02 |
| 申请号 |
KR20147011356 |
申请日期 |
2012.09.25 |
| 申请人 |
TOKYO ELECTRON LIMITED;KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAHARA SHIGERU;NISHIMURA EIICHI;MATSUMOTO TAKANORI |
| 分类号 |
H01L21/3065;H01L21/28;H01L21/304;H01L21/3213;H01L21/76;H01L21/768;H01L27/08 |
主分类号 |
H01L21/3065 |
| 代理机构 |
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