发明名称 Cascode bias of power MOS transistors
摘要 There is disclosed a driver circuit for a power amplifier of class D type having a segmented architecture with at least one current branch (22) which can be powered down in a low power mode of operation of the circuit. The branch comprising a switch with a cascode MOS transistor, the circuit further comprises a bias circuitry (31N, 31P) adapted for dynamically generating a dynamic bias control signal (DyncascN, DyncascP) so as to cause the cascode MOS transistor of the switch to be 'Off' in the low power mode.
申请公布号 EP2750287(A1) 申请公布日期 2014.07.02
申请号 EP20120306692 申请日期 2012.12.27
申请人 ST-ERICSSON SA 发明人 BINET, VINCENT;ALLIER, EMMANUEL;AMIARD, FRANÇOIS
分类号 H03F1/02;H03F3/217;H03F3/72 主分类号 H03F1/02
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